ADVANCED FLASH MEMORY CHIP IN THE WORLD
Combination of X3 and 32 nanometer Represents Breakthroughs in Size
and Density; Significantly Reduces Manufacturing Cost While
Maintaining Performance
Will allow for higher capacity of microSD cards not possible with
existing technologies
Maintains performance levels of 43nm process technology due to
SanDisk's advanced All Bit-Line architecture and 32nm process
technology advancements
SanDisk Corporation and Toshiba Corporation today announced the
co-development of multi-level cell NAND flash memory using 32-nm
process technology to produce a 32-Gb X3 memory chip. The breakthrough
introduction is expected to quickly bring to market advanced
technologies that will enable greater capacities and reduce
manufacturing costs for products ranging from memory cards to Solid
State Drives.
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