technology, today announced that it has begun using 40-nanometer (nm)
process technology to produce an eight-gigabit (Gb) Flex-OneNAND
fusion memory chip. Samsung's Flex-OneNAND is a proprietary memory
device that provides both SLC and MLC NAND in a single cost-efficient
chip. It has been designed for applications that require high speed
and high reliability in processing both code and data content.
Applications using Flex-OneNAND are expected to expand from
high-performance smart phones today, to full HDTVs, IPTVs and other
high-end applications by year end.
"Forty nanometer Flex-OneNAND is a tremendous advancement for the
memory industry, one which offers a uniquely cost-effective approach
to memory selection, while permitting designers the flexibility of
adjusting designs up to the final design stage," said Jim Elliott,
memory vice president, Samsung Semiconductor, Inc.
By adopting advanced 40nm class technology, Samsung achieves an
increase in productivity of up to 180 percent increase in productivity
over the first Flex-OneNAND, a 4Gb device designed on 60nm-class
technology.
Developed in 2007, Flex-OneNAND incorporates SLC and MLC NAND on a
single piece of silicon, allowing application designers to choose the
portion of SLC and MLC NAND storage to be used in any particular
design through a simple adjustment to the accompanying software. This
maximizes the performance and efficiency of the embedded flash chip.
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